CIR-S4 Industrial DDR4 memory modules for current processors

Speed is not witchcraft

New technologies such as AI (artificial intelligence) or industrial image processing depend on the fast handling of large amounts of data. Modern processors that can process large amounts of data extremely efficiently are a prerequisite. But also the main memory has an immense influence on the processing speed.

With the new industrial DDR4-2666 RAM series, we offer you memory modules with a data transfer rate of 2666 MHz. This makes them 11% faster than DDR4-2400 series memory.

The industrial DDR4-2666 memory is compatible with the latest Intel® Coffee Lake and AMD® Ryzen series processors and supports these processors in terms of data processing speed.

Industrial memory modules offer you a number of advantages, for example the installed components are fixed in a BOM list, the modules are available over the long term or can be adapted to your applications through various coating options.

The memory modules of the DDR4-2666 series are available in three formats (DIMM, DIMM low Profile, SO-DIMM) and with 4, 8 and 16 GB capacity. All modules feature low voltage consumption of only 1.2 V.

59 available

DDR4 DIMM | CIR-S4DUSV2604G

DDR4 DIMM memory module, 4 GB, 288-pin, PC2666, 512Mx8 SR, Samsung, 1.2V Features:JEDEC Standard 288-pin Dual In-Line memory moduleVoltage: 1.2VData rate: 2666 MHzOperating temperature: 0°C~+85°CNon-ECC DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.

€22.00*

110 available

DDR4 DIMM | CIR-S4DUSW2616G

DDR4 DIMM memory module, 16GB, 288-pin, PC2666, 1Gx8 DR, Samsung, 1.2V Features:JEDEC Standard Dual In-Line Memory ModuleVoltage: 1.2VData rate: 2666 MHzOperating temperature: 0°C~+85°CNon-ECC DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.

€55.00*

30 available

DDR4 SO-DIMM | CIR-S4SVSV2604G

DDR4 Very Low Profile SO-DIMM memory module, 4 GB, 260-pin, PC2666, 512Mx8 SR, Samsung,1.2V Features:JEDEC Standard 260-pin Small Outline Dual In-Line memory moduleVoltage: 1.2VData rate: 2666 MHzOperating temperature: 0°C~+85°CNon-ECCVery low profile DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.

€23.00*

DDR4 SO-DIMM | CIR-S4SVSW2608G

DDR4 Very Low Profile SO-DIMM memory module, 8 GB, 260-pin, PC2666, 1GBx8 SR, Samsung, 1,2V Features:JEDEC Standard 260-pin Small Outline Dual In-Line memory moduleVoltage: 1.2VData rate: 2666 MHzOperating temperature: 0°C~+85°CNon-ECC DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.

€33.00*

105 available

DDR4 SO-DIMM | CIR-S4SUSV2608G

DDR4 SO-DIMM memory module, 8 GB, 260-pin, PC2666, 512Mx8 DR, Samsung, 1.2V Features:JEDEC Standard 260-pin Small Outline Dual In-Line memory moduleVoltage: 1.2VData rate: 2666 MHzOperating temperature: 0°C~+85°CNon-ECC DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.

€39.00*

24 available

DDR4 DIMM | CIR-S4DUSX2632G

DDR4 DIMM memory module, 32GB, 288-pin, PC2666, 2Gx8 DR, Samsung, 1.2V Features:JEDEC Standard Dual In-Line Memory ModuleVoltage: 1.2VData rate: 2666 MHzOperating temperature: 0°C~+85°CNon-ECC DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.

€116.00*

CIR-S4 Series

Speed is not witchcraft

Do you have any questions?

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